Springer
Ferroelectric-Gate Field Effect Transistor Memories (English, Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama)
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Specifications
| Publisher | Springer |
| Language | English |
| ISBN-13 | 9789402408393 |
| ISBN-10 | 9402408398 |
| Author | Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama |
Product Description
Here on GlowMirror, you'll find Ferroelectric-Gate Field Effect Transistor Memories filed under Springer -- everything you need to know is covered below.
About the Book
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random…
ISBN: 9789402408393
Book Insights
What You'll Learn
- ·In-depth exploration of topics covered in Ferroelectric-Gate Field Effect Transistor Memories
- ·Key concepts explained with clarity and practical examples
- ·Insights valuable for anyone studying or working in Springer
Who Should Read This
Students and professionals interested in Springer, as well as general readers looking to expand their knowledge.
Key Highlights
- ·Brand new physical book delivered across India
- ·15-day hassle-free return policy
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Is Ferroelectric-Gate Field Effect Transistor Memories available in English?
Ferroelectric-Gate Field Effect Transistor Memories is available in English on GlowMirror.
Who is the author of Ferroelectric-Gate Field Effect Transistor Memories?
Ferroelectric-Gate Field Effect Transistor Memories is authored by Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama.
Who published Ferroelectric-Gate Field Effect Transistor Memories?
Ferroelectric-Gate Field Effect Transistor Memories is published by Springer.
How many pages does Ferroelectric-Gate Field Effect Transistor Memories have?
Page count information for Ferroelectric-Gate Field Effect Transistor Memories is available in the specifications section of this page.
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At an average reading speed of 250 words per minute, reading Ferroelectric-Gate Field Effect Transistor Memories takes a few hours to a few days depending on reading pace.
What is Ferroelectric-Gate Field Effect Transistor Memories about?
About the Book
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental ...
Is Ferroelectric-Gate Field Effect Transistor Memories suitable for beginners?
Whether Ferroelectric-Gate Field Effect Transistor Memories is suitable for beginners depends on your background in Springer. Review the product description and specifications above for details on the target audience and difficulty level.
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Ferroelectric-Gate Field Effect Transistor Memories is from the Springer edition/year. Check the specifications section for full edition details.
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