Ferroelectric-Gate Field Effect Transistor Memories (English, Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama)
by Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama
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Book Details
Publisher
Springer
Language
English
ISBN-13
9789402408393
ISBN-10
9402408398
Author
Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama
About the Book
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random…
ISBN: 9789402408393
ISBN-13: 9789402408393
ISBN-10: 9402408398
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Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama is the author of Ferroelectric-Gate Field Effect Transistor Memories. Browse more books by Byung-Eun Park | Hiroshi Ishiwara | Masanori Okuyama on GlowMirror.
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Product ID: isbn-9789402408393
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