-59% OFFCambridge University Press
Photo-induced Defects in Semiconductors (English, David Redfield | Richard H. Bube)
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Specifications
| Publisher | Cambridge University Press |
| Language | English |
| ISBN-13 | 9780521461962 |
| ISBN-10 | 0521461960 |
| Author | David Redfield | Richard H. Bube |
Product Description
Here on GlowMirror, you'll find Photo-induced Defects in Semiconductors filed under Cambridge University Press -- everything you need to know is covered below.
About the Book
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They al…
ISBN: 9780521461962
Book Insights
What You'll Learn
- ·In-depth exploration of topics covered in Photo-induced Defects in Semiconductors
- ·Key concepts explained with clarity and practical examples
- ·Insights valuable for anyone studying or working in Cambridge University Press
Who Should Read This
Beginners and newcomers to the subject, as well as curious general readers.
Key Highlights
- ·Brand new physical book delivered across India
- ·15-day hassle-free return policy
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Is Photo-induced Defects in Semiconductors available in English?
Photo-induced Defects in Semiconductors is available in English on GlowMirror.
Who is the author of Photo-induced Defects in Semiconductors?
Photo-induced Defects in Semiconductors is authored by David Redfield | Richard H. Bube.
Who published Photo-induced Defects in Semiconductors?
Photo-induced Defects in Semiconductors is published by Cambridge University Press.
How many pages does Photo-induced Defects in Semiconductors have?
Page count information for Photo-induced Defects in Semiconductors is available in the specifications section of this page.
How long does it take to read Photo-induced Defects in Semiconductors?
At an average reading speed of 250 words per minute, reading Photo-induced Defects in Semiconductors takes a few hours to a few days depending on reading pace.
What is Photo-induced Defects in Semiconductors about?
About the Book
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of c...
Is Photo-induced Defects in Semiconductors suitable for beginners?
Whether Photo-induced Defects in Semiconductors is suitable for beginners depends on your background in Cambridge University Press. Review the product description and specifications above for details on the target audience and difficulty level.
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Photo-induced Defects in Semiconductors is from the Cambridge University Press edition/year. Check the specifications section for full edition details.
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Photo-induced Defects in Semiconductors listed on GlowMirror is a brand new book in good condition.
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