Cambridge University Press
Nonlinear Transistor Model Parameter Extraction Techniques (English, Matthias Rudolph | Christian Fager | David E. Root)
by Matthias Rudolph | Christian Fager | David E. Root
Publisher: Cambridge University Press
Language: English
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Specifications
| Publisher | Cambridge University Press |
| Language | English |
| ISBN-13 | 9780521762106 |
| ISBN-10 | 0521762103 |
| Author | Matthias Rudolph | Christian Fager | David E. Root |
Product Description
Here on GlowMirror, you'll find Nonlinear Transistor Model Parameter Extraction Techniques filed under Cambridge University Press -- everything you need to know is covered below.
About the Book
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied…
ISBN: 9780521762106
Book Insights
What You'll Learn
- ·In-depth exploration of topics covered in Nonlinear Transistor Model Parameter Extraction Techniques
- ·Key concepts explained with clarity and practical examples
- ·Insights valuable for anyone studying or working in Cambridge University Press
Who Should Read This
Working professionals and industry practitioners seeking practical knowledge.
Key Highlights
- ·Brand new physical book delivered across India
- ·15-day hassle-free return policy
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Nonlinear Transistor Model Parameter Extraction Techniques is available in English on GlowMirror.
Who is the author of Nonlinear Transistor Model Parameter Extraction Techniques?
Nonlinear Transistor Model Parameter Extraction Techniques is authored by Matthias Rudolph | Christian Fager | David E. Root.
Who published Nonlinear Transistor Model Parameter Extraction Techniques?
Nonlinear Transistor Model Parameter Extraction Techniques is published by Cambridge University Press.
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Page count information for Nonlinear Transistor Model Parameter Extraction Techniques is available in the specifications section of this page.
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At an average reading speed of 250 words per minute, reading Nonlinear Transistor Model Parameter Extraction Techniques takes a few hours to a few days depending on reading pace.
What is Nonlinear Transistor Model Parameter Extraction Techniques about?
About the Book
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extra...
Is Nonlinear Transistor Model Parameter Extraction Techniques suitable for beginners?
Whether Nonlinear Transistor Model Parameter Extraction Techniques is suitable for beginners depends on your background in Cambridge University Press. Review the product description and specifications above for details on the target audience and difficulty level.
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